MMBV105GLT1G ON Semiconductor, MMBV105GLT1G Datasheet - Page 2

• Manufacturer Part Number: MMBV105GLT1G
• Description: DIODE TUNING SS 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBV105GLT1G

• Capacitance @ Vr, F: 2.8pF @ 25V, 1MHz
• Capacitance Ratio: 6.5
• Capacitance Ratio Condition: C3/C25
• Voltage - Peak Reverse (max): 30V
• Diode Type: Single
• Q @ Vr, F: 250 @ 3V, 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Capacitance, Junction: 2.8 pF
• Current, Forward: 200 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Tuning
• Temperature, Junction, Maximum: +125 °C
• Voltage, Reverse: 30 V
• Capacitance Cd Max @ Vr F: 2.8pF
• Q @ Vr F: 250
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 30V
• Diode Case Style: SOT-23
• No. Of Pins: 3
• Capacitance Ratio Min, Cvr1/cvr2: 4
• Rohs Compliant: Yes
• Current Rating: 200mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBV105GLT1GOS; MMBV105GLT1GOS; MMBV105GLT1GOSTR

ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
MMBV105GLT1
8.0
6.0
4.0
2.0
(I
(V
20
18
16
14
12
10
R
0
0.3
R
= 10 mAdc)
= 28 Vdc)
0.5
Device Type
f = 1.0 MHz
T
A
Figure 1. Diode Capacitance
= 25°C
V
1.0
R
, REVERSE VOLTAGE (VOLTS)
2.0 3.0
Characteristic
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
(T
5.0
-75
A
= 25°C unless otherwise noted)
V
Min
1.5
TYPICAL CHARACTERISTICS
R
V
-50
f = 1.0 MHz
R
10
= 25 Vdc, f = 1.0 MHz
= 3.0 Vdc
Figure 3. Diode Capacitance
-25
http://onsemi.com
T
A
C
pF
20 30
, AMBIENT TEMPERATURE (°C)
T
0
2
Max
2.8
+25
1000
100
10
10
+50
+75
V
f = 50 MHz
R
Symbol
V
= 3.0 Vdc
(BR)R
Typ
250
I
R
Q
+100
Figure 2. Figure of Merit
f, FREQUENCY (MHz)
+125
Min
30
−
100
Min
4.0
f = 1.0 MHz
Max
V
T
50
C
A
R
−
3
= 25°C
= 3 Vdc
C
/C
R
25
Max
6.5
nAdc
Unit
Vdc
1000