T1635H-600G STMicroelectronics, T1635H-600G Datasheet - Page 5

• Manufacturer Part Number: T1635H-600G
• Description: TRIAC 16A 600V D2PAK
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of T1635H-600G

• Triac Type: Alternistor - Snubberless
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 35mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 170A, 160A
• Current - On State (it (rms)) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Current - On State (it (rms) (max): 16A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

T1635H Series
Figure 9.
Figure 11. Variation of thermal resistance,
Figure 13. Acceptable repetitive peak
10
8
7
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
25
300
0
5
350
50
Relative variation of critical rate
of decrease of main current (di/dt)c
versus junction temperature
junction to ambient versus copper
surface under tab (PCB FR4,
e
off-state voltage versus case-
ambient thermal resistance
10
CU
35 µm)
400
15
75
V
DRM
S
T
CU
j
(°C)
/V
450
20
(cm²)
RRM
(V)
100
25
500
30
R
125
th(j-c)
T
550
J
=150 °C
=1.2 °C/W
35
D²PAK
150
600
40
Figure 10. Relative variation of critical rate of
Figure 12. Leakage current versus junction
1.E+01
1.E+00
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.E-01
1.E-02
1.E-03
1.E-04
0.1
50
V
V
DRM
DRM
=V
=V
decrease of main current (di/dt)c vs
reapplied dV/dt (typical values)
temperature for different values of
blocking voltage (typical values)
RRM
RRM
=200 V
=200 V
75
1.0
V
V
DRM
DRM
=V
=V
dV/dt (V/µs)
RRM
RRM
=400 V
=400 V
T
j
100
(°C)
V
V
DRM
DRM
10.0
=V
=V
RRM
RRM
Characteristics
=600 V
=600 V
125
100.0
5/10
150