T2550H-600TRG STMicroelectronics, T2550H-600TRG Datasheet - Page 4

• Manufacturer Part Number: T2550H-600TRG
• Description: TRIAC 25A 50MA 600V TO-220AB
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of T2550H-600TRG

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 75mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 250A, 260A
• Current - On State (it (rms)) (max): 25A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 25A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
Figure 11. Acceptable repetitive peak off-state voltage versus case-ambient thermal resistance
4/8
Figure 7.
Figure 9.
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
25
(dI/dt)c [T ] /
-40
I
GT H L
I
H
,I ,I [T ] /
& I
L
-20
j
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
Relative variation of critical rate of
decrease of main current versus
junction temperature
I
50
GT
j
(dI/dt)c [T = 150°C
0
I
GT H L
,I ,I [T =25°C]
20
j
75
40
j
T (°C)
T (°C)
j
j
60
]
100
10
9
8
7
6
5
4
3
2
1
0
80
300
R
th(c-a)
100
(°C/W)
350
125
120
140
400
V
DRM
160
150
/ V
450
Figure 8.
Figure 10. Leakage current versus junction
RRM
1E+0
1.6
1.4
1.2
1.0
0.8
0.6
1E+1
1E-2
1E-3
1E-1
(V)
0.1
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
500
50
I
DRM
/ I
R
V = V = 200V
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
temperature for different values of
blocking voltage (typical values)
RRM
th(j-c)
550
D
T
J
=150 °C
=0.8 °C/W
R
(mA)
75
V = V = 400V
1.0
D
600
(dV/dt)c (V/µs)
R
T (°C)
V = V = 600V
j
100
D
R
10.0
125
T2550H
100.0
150