AVS10CB STMicroelectronics, AVS10CB Datasheet - Page 2

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AVS10CB

Manufacturer Part Number
AVS10CB
Description
SWITCH AUTOMATIC VOLT TO-220AB
Manufacturer
STMicroelectronics
Datasheet

Specifications of AVS10CB

Mfg Application Notes
AVS10,12, AN390 Appl Note
Triac Type
Internally Triggered
Mounting Type
Through Hole
Configuration
Single
Voltage - Off State
600V
Current - Non Rep. Surge 50, 60hz (itsm)
80A, 85A
Current - On State (it (rms)) (max)
8A
Package / Case
TO-220AB
Current - On State (it (rms) (max)
8A
Uninsulated Package
AVS10CB
Insulated Package 2500v(rms)
AVS10CBI
It(rms)
9A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Hold (ih) (max)
-
Current - Gate Trigger (igt) (max)
-
Voltage - Gate Trigger (vgt) (max)
-

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AVS10
BLOCK DIAGRAM
TRIAC AVS10CB / AVS10CBI T
(1) Gate supply : I G = 100mA – di/dt = 1A / s
(2) T
2/8
ABSOLUTE MAXIMUM RATINGS
CONTROLLER AVS1ACP08
OSC/OUT
Symbol
dV/dt *
I
Symbol
dI / dt
V
T(RMS)
j
OSC/IN
I
V
T
Toper
TSM
= 110°C
I
DRM
I
Tstg
T
V
I
I
2
stg
/ V
/ I
t
j
SS
O
O
AVS1ACP08
Repetitive peak off-state voltage (2)
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current ( T
I
Critical rate of rise of on-state current (1)
Linear slope up to 0.67 V
Storage Temperature
Junction Temperature Range
2
t value
Supply voltage
I / O voltage
I / O current
Storage Temperature
Operating Temperature code ''C''
Peak Voltage
Zero Crossing
Oscillator
Detector
Supply
Detector
Parasitic
Reset
Filter
j
= +25°C (unless otherwise specified)
DRM
Parameter
Parameter
CP
CP
S
Gate open
* For either polarity of electrode A2 voltage with reference to electrode A1
Controller
MODE
Triggering
Controller
Mains
mode
Time
j
Q
Q
initial = 25°C )
AVS10CB
AVS10CBI
Tj = 110°C
T
T
Repetitive
Repetitive
t = 10ms
F = 50Hz
t = 8.3ms
t = 10ms
C
C
= 80°C
= 70°C
Non
V
SS
Min.
-12
-40
-60
0
-0.5
Value
- 40 + 150
0 + 125
Value
± 600
100
85
80
32
20
50
8
Max.
+150
AVS10CBI
AVS10CB
+40
+70
0.5
0.5
or
A2
A1
Unit
A/µs
V/µs
A
°C
Unit
V
A
A
mA
2
°C
°C
V
V
s

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