BTB04-600SL STMicroelectronics, BTB04-600SL Datasheet - Page 4

• Manufacturer Part Number: BTB04-600SL
• Description: IC TRIAC 4A 600V TO-220AB
• Manufacturer: STMicroelectronics

Specifications of BTB04-600SL

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 35A, 38A
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-220AB
• Current - On State (it (rms) (max): 4A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.5 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6671; BTB04-600SL

BTB04-600SL
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 9: Relative variation of critical rate of decrease
of main current versus junction temperature.
8
7
6
5
4
3
2
1
0
4/5
Fig. 5: Surge peak on-state current versus number
of cycles.
40
35
30
25
20
15
10
5
0
25
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
-40 -30 -20 -10
1
ITSM(A)
IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C]
IH & IL
Repetitive
Tc=110°C
IGT
50
0
Non repetitive
Tj initial=25°C
10 20 30 40 50 60 70 80 90 100 110 120 130
10
Number of cycles
Tj(°C)
Tj(°C)
75
100
100
t=20ms
1000
125
Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms, and
corresponding value of I
Fig. 8: Relative variation of critical rate of decrease
of main current versus reapplied dV/dt (typical val-
ues).
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 10: Relative variation of static dV/dt immunity
versus junction temperature.
1000
8
7
6
5
4
3
2
1
0
100
25
10
dV/dt [Tj] / dV/dt [Tj = 125°C]
0.1
1
0.01
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
ITSM(A), I t (A s)
dI/dt limitation:
2
50A/µs
50
2
1.0
0.10
dV/dt (V/µs)
Tj(°C)
tp(ms)
2
75
t.
10.0
1.00
100
Tj initial=25°C
ITSM
I²t
VD=VR=400V
10.00
100.0
125