BTA416Y-800B,127 NXP Semiconductors, BTA416Y-800B,127 Datasheet - Page 3

• Manufacturer Part Number: BTA416Y-800B,127
• Description: TRIAC 800V 16A TO220AB-3
• Manufacturer: NXP Semiconductors

Specifications of BTA416Y-800B,127

• Package / Case: SOT78D (TO-220)
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 60mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 160A, 176A
• Current - On State (it (rms) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Standard
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 176 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061319127::BTA416Y-800B::BTA416Y-800B

NXP Semiconductors
BTA416Y_SER_B_C_1
Product data sheet
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
TSM
(A)
(W)
P
tot
180
150
120
20
16
12
90
60
30
8
4
0
0
f = 50 Hz
values
0
1
= conduction angle
conduction
(degrees)
angle
120
180
30
60
90
2
factor
form
1.57
2.8
2.2
1.9
a
4
4
16 A 3-quadrant triacs, insulated, high commutation, high temperature
10
6
Rev. 01 — 3 October 2007
8
BTA416Y series B and C
10
10
12
2
14
n (number of cycles)
I
T
T
j(init)
16
1/f
= 25 C max
120
90
60
30
= 180
© NXP B.V. 2007. All rights reserved.
I
T(RMS)
003aab816
003aab817
I
TSM
(A)
t
10
18
3
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