BT136X-600D,127 NXP Semiconductors, BT136X-600D,127 Datasheet - Page 4
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BT136X-600D,127
Manufacturer Part Number
BT136X-600D,127
Description
TRIAC 600V 4A SOT186A
Manufacturer
NXP Semiconductors
Datasheet
1.BT136X-600D127.pdf
(6 pages)
Specifications of BT136X-600D,127
Package / Case
TO-220-3 Full Pack
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
10mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
5mA
Current - Non Rep. Surge 50, 60hz (itsm)
25A, 27A
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
4A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
27 A
On-state Rms Current (it Rms)
4 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.7 V
Gate Trigger Current (igt)
5 mA
Holding Current (ih Max)
10 mA
Forward Voltage Drop
1.4 V
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Off-state Capacitance Co
10 pF
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934038120127
BT136X-600D
BT136X-600D
BT136X-600D
BT136X-600D
Philips Semiconductors
June 2001
Triacs
logic level
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
IGT(25 C)
(T
3
2
1
0
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj / C
Tj / C
Tj / C
50
50
50
100
100
T2+ G-
T2- G-
100
T2+ G+
T2- G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
12
10
100
0.01
8
6
4
2
0
10
0.1
10
1
0
10us
IT / A
1
0
Rs = 0.091 ohms
dVD/dt (V/us)
Tj = 125 C
dV
Vo = 1.27 V
Zth j-hs (K/W)
Tj = 25 C
with heatsink compound
without heatsink compound
D
/dt versus junction temperature T
0.5
0.1ms
unidirectional
pulse width t
1ms
1
50
VT / V
tp / s
10ms
Tj / C
1.5
bidirectional
typ
BT136X series D
P
D
p
0.1s
.
100
Product specification
2
t p
max
1s
2.5
th j-hs
t
, versus
Rev 1.400
j
.
10s
150
3