BTA2008-800E,412 NXP Semiconductors, BTA2008-800E,412 Datasheet - Page 7

• Manufacturer Part Number: BTA2008-800E,412
• Description: TRIAC 800V 80MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BTA2008-800E,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 12mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Current - On State (it (rms)) (max): 800mA
• Voltage - Gate Trigger (vgt) (max): 2V
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 9.9 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.35 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061105412; BTA2008-800E; BTA2008-800E

NXP Semiconductors
7. Dynamic characteristics
Table 6.
BTA2008_SER_D_E_1
Product data sheet
Symbol Parameter
dV
dI
t
gt
Fig 7.
com
V
D
GT(25 C)
/dt
V
/dt rate of change of
GT
1.6
1.2
0.8
0.4
rate of rise of off-state
voltage
commutating current
gate-controlled turn-on time I
50
Normalized gate trigger voltage as a function
of junction temperature
Dynamic characteristics
0
50
100
Conditions
V
T
waveform; gate open circuit
V
I
dV/dt = 10 V/ s; gate open
circuit
I
T(RMS)
TM
G
j
DM
DM
= 125 C; exponential
= 0.1 A; dI
= 1 A; V
001aab101
T
= 0.67
= 400 V; T
j
( C)
= 0.8 A;
Rev. 01 — 18 January 2008
150
D
G
V
= V
/dt = 5 A/ s
DRM(max)
j
= 125 C;
DRM(max)
;
Fig 8.
I
;
GT(25 C)
BTA2008 series D and E
I
GT
(1) T2 G
(2) T2+ G
(3) T2+ G+
0.8 A Three-quadrant triacs high commutation
3
2
1
0
50
Normalized gate trigger current as a function
of junction temperature
Min
200
0.5
(1)
(2)
(3)
BTA2008-600D
BTA2008-800D
-
Typ
0
2
-
-
Max
-
-
-
50
Min
600
1.6
BTA2008-600E
BTA2008-800E
-
100
© NXP B.V. 2008. All rights reserved.
Typ
001aac669
T
2
-
-
j
( C)
Max
150
-
-
-
Unit
V/ s
A/ms
7 of 12
s