BTA2008-600D,412 NXP Semiconductors, BTA2008-600D,412 Datasheet - Page 2

• Manufacturer Part Number: BTA2008-600D,412
• Description: TRIAC 600V 80MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BTA2008-600D,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 10mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Current - On State (it (rms)) (max): 800mA
• Voltage - Gate Trigger (vgt) (max): 2V
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 9.9 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.35 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061106412; BTA2008-600D; BTA2008-600D

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA2008_SER_D_E_1
Product data sheet
Type number
BTA2008-600D
BTA2008-600E
BTA2008-800D
BTA2008-800E
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Rev. 01 — 18 January 2008
Conditions
BTA2008-600D; BTA2008-600E
BTA2008-800D; BTA2008-800E
full sine wave; T
Figure 4
full sine wave; T
surge; see
t
I
dI
over any 20 ms period
p
TM
G
t = 20 ms
t = 16.7 ms
= 10 ms
/dt = 0.2 A/ s
= 1.5 A; I
and
Figure 2
G
5
BTA2008 series D and E
= 20 mA;
lead
j
0.8 A Three-quadrant triacs high commutation
= 25 C prior to
and
70 C; see
3
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2008. All rights reserved.
Max
600
800
0.8
9
9.9
0.41
100
1
5
0.1
+150
125
Version
SOT54
Unit
V
V
A
A
A
A
A/ s
A
W
W
C
C
2
s
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