T1235-800G-TR STMicroelectronics, T1235-800G-TR Datasheet - Page 4

• Manufacturer Part Number: T1235-800G-TR
• Description: TRIAC 12A 35MA 800V D2PAK
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of T1235-800G-TR

• Triac Type: Alternistor - Snubberless
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 35mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 126A
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Current - On State (it (rms) (max): 12A
• Peak Repetitive Off-state Voltage, Vdrm: 800V
• Gate Trigger Current Max (qi), Igt: 35mA
• On State Rms Current It(rms): 12A
• Peak Non Rep Surge Current Itsm 50hz: 120A
• Holding Current Max Ih: 35mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6593-2; T1235-800G-TR

Characteristics
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Figure 1.
Figure 3.
Figure 5.
16
14
12
10
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
0
2
10
1
0
P(W)
0.5
0
I
I
T(RMS)
TM
R = 35 m
V = 0.85V
T =
1
to
d
j
(A)
T max.
j
T max.
j
1.0
(A)
2
Ω
25
Maximum power dissipation versus
RMS on-state current (full cycle)
RMS on-state current versus
ambient temperature (printed
circuit board FR4, copper
thickness: 35µm) (full cycle)
On-state characteristics (maximum
values)
1.5
3
4
2.0
T = 25°C
j
50
5
I
T(RMS)
.
2.5
T (°C)
V
C
TM
6
(V)
(A)
3.0
7
75
3.5
8
9
(S=1cm )
4.0
100
D PAK
2
10
2
4.5
11
125
5.0
12
Figure 2.
Figure 4.
Figure 6.
14
13
12
10
11
1E+0
130
120
110
100
1E-2
9
8
7
6
5
4
3
2
0
1E-1
1
90
80
70
60
50
40
30
20
10
0
0
I
T(RMS)
1E-3
1
I
TSM
K=[Z /R
(A)
(A)
Repetitive
T =90°C
C
th
Z
25
th(j-c)
1E-2
th
RMS on-state current versus case
temperature (full cycle)
Relative variation of thermal
impedance versus pulse duration
Surge peak on-state current versus
number of cycles
]
Non repetitive
T initial=25°C
10
j
1E-1
50
Number of cycles
T (°C)
C
t (s)
p
1E+0
BTA12, BTB12, T12xx
75
Z
th(j-a)
100
1E+1
BTA
100
BTB / T12
t=20ms
One cycle
1E+2
5E+2
1000
125