T1050H-6T STMicroelectronics, T1050H-6T Datasheet - Page 5
![TRIAC 10A 600V HI TEMP TO-220AB](/photos/5/74/57495/t1050h-6t_sml.jpg)
T1050H-6T
Manufacturer Part Number
T1050H-6T
Description
TRIAC 10A 600V HI TEMP TO-220AB
Manufacturer
STMicroelectronics
Series
Snubberless™r
Datasheet
1.T1035H-6G-TR.pdf
(10 pages)
Specifications of T1050H-6T
Triac Type
Alternistor - Snubberless
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
75mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
100A, 105A
Current - On State (it (rms)) (max)
10A
Voltage - Gate Trigger (vgt) (max)
1V
Package / Case
TO-220AB
Current - On State (it (rms) (max)
10A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7629-5
T1050H-6T
T1050H-6T
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
T1035H, T1050H
Figure 9.
Figure 11. Leakage current versus junction
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
1.0E-01
0.1
50
V
V
DRM
DRM
Relative variation of critical rate of
decrease of main current (dI/dt)c
versus reapplied (dV/dt)c
(typical values)
temperature for different values of
blocking voltage (typical values)
=V
=V
RRM
RRM
=200 V
=200 V
75
1.0
V
V
DRM
DRM
=V
=V
(dV/dt)
RRM
RRM
=400 V
=400 V
T
C
j
100
(°C)
(V/µs)
V
V
10.0
DRM
DRM
=V
=V
RRM
RRM
125
=600 V
=600 V
100.0
150
Figure 10. Relative variation of critical rate of
Figure 12. Variation of thermal resistance
8
7
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
25
0
5
50
decrease of main current versus
junction temperature
junction to ambient versus copper
surface under tab (Epoxy printed
circuit board FR4,
copper thickness = 35 µm)
10
15
75
T
S
j
(°C)
CU
20
(cm²)
100
25
Characteristics
30
125
35
D²PAK
150
40
5/10