MAC4DCN-1G ON Semiconductor, MAC4DCN-1G Datasheet - Page 6

• Manufacturer Part Number: MAC4DCN-1G
• Description: THYRISTOR TRIAC 4A 800V DPAK-3
• Manufacturer: ON Semiconductor

Specifications of MAC4DCN-1G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 35mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 40A @ 60Hz
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
• Current - On State (it (rms) (max): 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MAC4DCN-001G; MAC4DCN-1GOS

8.0 K
6.0 K
4.0 K
2.0 K
10 K
0
100
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
I
800 V
TM
ADJUST FOR
Figure 13. Typical Exponential Static dv/dt
600 V
, 60 Hz V
200 V
versus Junction Temperature, MT2(+)
V
PK
CHARGE
105
RMS
= 400 V
AC
T
J
, JUNCTION TEMPERATURE ( C)
TRIGGER
Note: Component values are for verification of rated (di/dt)
110
100
1.0
10
CONTROL
NON‐POLAR
115
CHARGE
0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
V
DRM
t
w
GATE OPEN
5.0
C
L
Figure 15. Critical Rate of Rise of
T
f =
120
J
(di/dt)
= 125 C
2 t
1
w
http://onsemi.com
c
10
=
Commutating Voltage
6f I
1000
TM
125
15
100 C
6
L
8.0 K
6.0 K
4.0 K
2.0 K
14 K
12 K
10 K
1N914
L
20
0
c
. See AN1048 for additional information.
100
MEASURE
51 W
800 V
Figure 14. Typical Exponential Static dv/dt
600 V
I
25
75 C
MT2
versus Junction Temperature, MT2(−)
G
V
V
PK
105
PK
MT1
= 400 V
= 400 V
30
T
J
, JUNCTION TEMPERATURE ( C)
110
35
1N4007
115
-
+
200 V
GATE OPEN
120
c
125