MAC4DCN-1G ON Semiconductor, MAC4DCN-1G Datasheet - Page 5

• Manufacturer Part Number: MAC4DCN-1G
• Description: THYRISTOR TRIAC 4A 800V DPAK-3
• Manufacturer: ON Semiconductor

Specifications of MAC4DCN-1G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 35mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 40A @ 60Hz
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
• Current - On State (it (rms) (max): 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MAC4DCN-001G; MAC4DCN-1GOS

8.0 K
6.0 K
4.0 K
2.0 K
8.0 K
6.0 K
4.0 K
2.0 K
10 K
10 K
60
50
40
30
20
10
0
0
0
-50
100
400
800 V
125 C
Figure 11. Exponential Static dv/dt versus
Figure 7. Typical Holding Current versus
Figure 9. Exponential Static dv/dt versus
110 C
MT2 NEGATIVE
-25
T
J
= 100 C
MT2 POSITIVE
R
600 V
Gate−MT1 Resistance, MT2(+)
G-MT1
500
T
J
, JUNCTION TEMPERATURE ( C)
Junction Temperature
V
0
Peak Voltage, MT2(+)
, GATE-MT1 RESISTANCE (OHMS)
PK
V
, PEAK VOLTAGE (VOLTS)
PK
= 400 V
25
1000
600
50
75
700
T
GATE OPEN
J
= 125 C
100
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10 K
125
800
5
5.0 K
8.0 K
6.0 K
4.0 K
2.0 K
15 K
10 K
14 K
12 K
10 K
120
100
80
60
40
20
0
0
0
-50
100
400
600 V
800 V
Q2
Q1
Q3
Figure 10. Exponential Static dv/dt versus
Figure 12. Exponential Static dv/dt versus
Figure 8. Typical Latching Current versus
125 C
V
-25
PK
110 C
= 400 V
R
Gate−MT1 Resistance, MT2(−)
G-MT1
500
T
J
, JUNCTION TEMPERATURE ( C)
Junction Temperature
V
Peak Voltage, MT2(−)
0
T
, GATE-MT1 RESISTANCE (OHMS)
PK
J
= 100 C
, PEAK VOLTAGE (VOLTS)
25
1000
600
50
75
700
T
J
= 125 C
GATE OPEN
100
10 K
800
125