TPDV640RG STMicroelectronics, TPDV640RG Datasheet
TPDV640RG
Specifications of TPDV640RG
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TPDV640RG Summary of contents
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FEATURES High commutation: > 142A/ms (400Hz) Insulating voltage = 2500V (RMS) (UL Recognized: EB81734) High voltage capability: V DRM DESCRIPTION The TPDV640 ---> TPDV1240 use a high perfor- mance passivated glass alternistor technology. Featuring very high commutation levels and ...
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TPDV640 ---> TPDV1240 THERMAL RESISTANCES Symbol Rth (j-a) Contact to ambient Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) GATE CHARACTERISTICS (maximum values ...
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Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 3: RMS on-state current versus case temper- ature. Fig. 5: Relative variation of gate trigger current and holding current versus ...
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TPDV640 ---> TPDV1240 Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and cor- 2 responding value Fig. 9: Safe operating area. 4/5 Fig. 8: On-state characteristics (maximum values). ...
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... STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. ...