T2035H-6T STMicroelectronics, T2035H-6T Datasheet - Page 5

• Manufacturer Part Number: T2035H-6T
• Description: TRIAC 20A 600V HI TEMP TO-220AB
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of T2035H-6T

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 35mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 200A, 210A
• Current - On State (it (rms)) (max): 20A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-220AB
• Current - On State (it (rms) (max): 20A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7638-5; T2035H-6T

T2035H, T2050H
Figure 9.
Figure 11. Leakage current versus junction
Figure 13. Thermal resistance junction to
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
80
70
60
50
40
30
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0E-01
0
0.1
0
50
5
V
V
DRM
DRM
Relative variation of critical rate of
decrease of main current (dI/dt)c
versus reapplied (dV/dt)c
(typical values)
temperature for different values of
blocking voltage (typical values)
ambient versus copper surface
under tab
=V
=V
10
RRM
RRM
=200 V
=200 V
75
1.0
V
V
15
DRM
DRM
(dV/dt)
=V
=V
RRM
RRM
S
CU
=400 V
=400 V
(cm²)
20
C
T
j
100
(V/µs)
(°C)
25
V
V
10.0
DRM
DRM
=V
=V
RRM
RRM
30
125
=600 V
=600 V
35
D²PAK
100.0
150
40
Figure 10. Relative variation of critical rate of
Figure 12. Acceptable repetitive peak off-state
8
7
6
5
4
3
2
1
0
40
35
30
25
20
15
10
5
0
25
300
350
50
decrease of main current versus
junction temperature
voltage versus case to ambient
thermal resistance
400
75
V
DRM
T
/V
450
j
(°C)
RRM
(V)
100
500
Characteristics
R
125
th(j-c)
T
550
J
=150 °C
=1.0 °C/W
150
600
5/10