Z0103NN,135 NXP Semiconductors, Z0103NN,135 Datasheet - Page 3

• Manufacturer Part Number: Z0103NN,135
• Description: TRIAC 800V 1A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of Z0103NN,135

• Package / Case: TO-261-4, TO-261AA
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 7mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 3mA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 8.5A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 8.5 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 7 mA
• Forward Voltage Drop: 1.6 V
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2194-2; 934057055135; Z0103NN /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Z0103NN
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
T
/dt
I
T(RMS)
(A)
8
6
4
2
0
10
duration; maximum values
RMS on-state current as a function of surge
-2
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
10
-1
1
surge duration (s)
All information provided in this document is subject to legal disclaimers.
003aac269
10
Rev. 05 — 21 March 2011
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
over any 20 ms period
p
p
T
T
T
T
= 16.7 ms
= 10 ms; sine-wave pulse
= 1 A; I
= 1 A; I
= 1 A; I
= 1 A; I
Figure
Figure
G
G
G
G
Fig 2.
3; see
4; see
= 20 mA; dI
= 20 mA; dI
= 20 mA; dI
= 20 mA; dI
I
T(RMS)
(A)
sp
j(init)
j(init)
1.2
0.8
0.4
0
Figure
Figure 5
-50
point temperature; maximum values
RMS on-state current as a function of solder
≤ 105 °C;
= 25 °C; t
= 25 °C;
G
G
G
G
/dt = 0.1 A/µs;
/dt = 0.1 A/µs;
/dt = 0.1 A/µs;
/dt = 0.1 A/µs;
1; see
0
p
= 20 ms;
Figure 2
50
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
100
Z0103NN
© NXP B.V. 2011. All rights reserved.
003a a c270
T
s p
0.32
150
Max
800
1
8
8.5
50
50
50
20
1
2
0.1
125
(°C)
150
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
3 of 15
2
s