EMF9T2R Rohm Semiconductor, EMF9T2R Datasheet - Page 4

• Manufacturer Part Number: EMF9T2R
• Description: TRANS DUAL BIP+MOS EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMF9T2R

• Transistor Type: NPN, N-Channel
• Applications: General Purpose
• Voltage - Rated: 12V NPN, 30V N Channel
• Current Rating: 500mA NPN, 100mA N Channel
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Tr2
Fig.12 Static drain-source on-state
Fig.9 Typical transfer characteristics
Fig.15 Forward transfer admittance vs.
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
0.005
0.002
0.001
0.05
0.02
0.01
0
0.5
50
20
10
0.5
0.2
0.1
0.001
5
2
1
V
Pulsed
0.0001
DS
GATE-SOURCE VOLTAGE : V
resistance vs. drain current ( ΙΙ )
drain current
=3V
0.002
0.0002 0.0005 0.001 0.002
Ta=−25°C
Ta=125°C
1
DRAIN CURRENT : I
0.005 0.01 0.02
DRAIN CURRENT : I
125°C
−25°C
25°C
75°C
75°C
25°C
2
Ta=125°C
0.005 0.01 0.02
−25°C
75°C
25°C
0.05 0.1
3
D
D
0.05
GS
(A)
(A)
V
Pulsed
(V)
0.1 0.2
GS
V
Pulsed
0.2
DS
=2.5V
=3V
4
0.5
0.5
1.5
0.5
2
1
0
−50
200m
100m
0.5m
0.2m
0.1m
Fig.10 Gate threshold voltage vs.
50m
20m
10m
Fig.13 Static drain-source on-state
5m
2m
1m
15
10
0
5
CHANNEL TEMPERATURE : Tch (°C)
0
0
Fig.16 Reverse drain current vs.
−25
SOURCE-DRAIN VOLTAGE : V
GATE-SOURCE VOLTAGE : V
channel temperature
0
resistance vs. gate-source
voltage
source-drain voltage ( Ι )
5
25
0.5
50
10
75
I
I
D
D
Ta=125°C
=0.1A
=0.05A
100 125 150
1
−25°C
V
I
Pulsed
D
75°C
25°C
DS
=0.1mA
15
=3V
Ta=25°C
Pulsed
GS
V
Pulsed
SD
GS
(V)
(V)
=0V
1.5
20
Fig.11 Static drain-source on-state
Fig.14 Static drain-source on-state
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
0.5
50
20
10
5m
2m
1m
0.001
5
2
1
9
8
7
6
5
4
3
2
1
0
−50
Fig.17 Reverse drain current vs.
0
0.002
CHANNEL TEMPERATURE : Tch (°C)
−25
SOURCE-DRAIN VOLTAGE : V
resistance vs. drain current ( Ι )
V
resistance vs. channel
temperature
GS
Ta=125°C
=4V
DRAIN CURRENT : I
0.005 0.01 0.02
source-drain voltage ( ΙΙ )
I
−25°C
0
D
75°C
25°C
=100mA
0.5
25
Rev.A
50
0V
0.05 0.1
75
I
D
=50mA
1
D
100 125
(A)
EMF9
V
Pulsed
V
Pulsed
Ta=25°C
Pulsed
SD
GS
0.2
GS
4/5
(V)
=4V
=4V
150
0.5
1.5