EMF9T2R Rohm Semiconductor, EMF9T2R Datasheet

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EMF9T2R

Manufacturer Part Number
EMF9T2R
Description
TRANS DUAL BIP+MOS EMT6
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of EMF9T2R

Transistor Type
NPN, N-Channel
Applications
General Purpose
Voltage - Rated
12V NPN, 30V N Channel
Current Rating
500mA NPN, 100mA N Channel
Mounting Type
Surface Mount
Package / Case
EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
Power management (dual transistors)
EMF9
2SC5585 and 2SK3019 are housed independently in a EMT6 package.
Power management circuit
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Silicon epitaxial planar transistor
Basic ordering unit (pieces)
Features
Structure
Equivalent circuits
Packaging specifications
Application
Tr2
(3)
(4)
Package
Marking
Code
Type
(5)
(2)
(6)
(1)
Tr1
EMF9
EMT6
8000
T2R
F9
ROHM : EMT6
Dimensions (Units : mm)
Abbreviated symbol : F9
( 4 )
( 5 )
( 6 )
1.2
1.6
Each lead has
( 3 )
( 2 )
( 1 )
same dimensions
Rev.A
EMF9
1/5

Related parts for EMF9T2R

EMF9T2R Summary of contents

Page 1

Transistors Power management (dual transistors) EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. Application Power management circuit Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. Structure ...

Page 2

Transistors Absolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage V EBO I C Collector current I CP Junction temperature Tj Range of storage temperature Tstg ∗ Single pulse P =1ms W ...

Page 3

Transistors Electrical characteristic curves Tr1 1000 V =2V CE Pulsed 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 Grounded emitter propagation characteristics 1000 = ...

Page 4

Transistors Tr2 200m = 100m Pulsed 50m 20m 10m 5m 2m Ta=125°C 1m 75°C 25°C 0.5m −25°C 0.2m 0. GATE-SOURCE VOLTAGE : V (V) GS Fig.9 Typical transfer characteristics 50 =2. ...

Page 5

Transistors 50 Ta =25°C f=1MH Z = iss 5 C oss C rss 2 1 0.5 0.1 0.2 0 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.18 Typical capacitance vs. ...

Page 6

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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