UMF9NTR Rohm Semiconductor, UMF9NTR Datasheet - Page 2

• Manufacturer Part Number: UMF9NTR
• Description: TRANS NPN/N-CH 12V 500MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMF9NTR

• Transistor Type: NPN, N-Channel
• Applications: General Purpose
• Voltage - Rated: 12V NPN, 30V N-Channel
• Current Rating: 500mA NPN, 100mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN + N MOSFET
• Collector Emitter Voltage V(br)ceo: 12V
• Gain Bandwidth Ft Typ: 320MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 500mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 270
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Tr1
Tr2
Tr1
Tr2
∗1 P
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
∗1 Single pulse P
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation
Channel temperature
Range of storage temperature
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
Forward transfer admittance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Turn-off delay time
Fall time
Collector-base breakdown voltage
Transition frequency
Input capacitance
Rise time
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
W
on-state resistance
≤10ms Duty cycle≤50%
Parameter
Parameter
W
Parameter
Parameter
=1ms
Continuous
Continuous
Pulsed
Pulsed
Symbol
Symbol
V
V
V
V
Tstg
V
Tstg
I
Tch
I
I
P
I
DRP
P
Tj
CBO
CEO
EBO
I
DSS
GSS
I
DR
CP
DP
C
D
C
D
Symbol
V
Symbol
V
R
BV
BV
BV
V
150(TOTAL)
150(TOTAL)
(BR)DSS
−55
−55
Cob
t
t
I
I
I
|Y
C
CE(sat)
I
C
C
h
GS(th)
DS(on)
d(on)
d(off)
CBO
EBO
GSS
DSS
f
t
t
FE
oss
CEO
CBO
T
rss
EBO
iss
fs
r
f
Limits
Limits
|
500
150
±20
100
200
100
200
150
1.0
to
to
15
12
30
6
+150
+150
Min.
Min.
270
0.8
12
15
30
20
6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
mW
Unit
mW
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
A
V
V
Typ.
Typ.
100
320
∗1
∗2
∗1
∗1
∗2
7.5
13
15
35
80
80
−
−
−
−
−
−
−
−
−
−
5
7
−
9
4
Max.
Max.
100
100
250
680
1.0
1.5
±1
13
−
−
−
−
−
−
8
−
−
−
−
−
−
−
−
MHz
Unit
Unit
mV
nA
nA
pF
µA
µA
ms
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
Ω
Ω
−
V
I
I
I
V
V
I
V
V
V
V
I
V
V
I
I
V
V
I
V
R
C
C
E
C
D
D
D
D
CB
EB
CE
CE
CB
GS
DS
DS
DS
DS
GS
=1mA
=10µA
=10µA
=200mA, I
GS
=10µA, V
=10mA, V
=1mA, V
=10mA, V
=6V
=15V
=2V, I
=2V, I
=10V, I
=30V, V
=3V, I
=3V, I
=5V, V
=±20V, V
=5V, R
=10Ω
C
E
D
D
=−10mA, f=100MHz
GS
GS
=10mA
=100µA
=10mA
L
E
GS
Conditions
Conditions
=500Ω,
=0mA, f=1MHz
GS
GS
DD
B
=2.5V
=0V, f=1MHz
=10mA
DS
=0V
=0V
=4V
=0V
5V,
Rev.A
UMF9N
2/5