UMF9NTR Rohm Semiconductor, UMF9NTR Datasheet

TRANS NPN/N-CH 12V 500MA SOT-363

UMF9NTR

Manufacturer Part Number
UMF9NTR
Description
TRANS NPN/N-CH 12V 500MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of UMF9NTR

Transistor Type
NPN, N-Channel
Applications
General Purpose
Voltage - Rated
12V NPN, 30V N-Channel
Current Rating
500mA NPN, 100mA N-Channel
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
NPN + N MOSFET
Collector Emitter Voltage V(br)ceo
12V
Gain Bandwidth Ft Typ
320MHz
Power Dissipation Pd
150mW
Dc Collector Current
500mA
Operating
RoHS Compliant
Dc Current Gain Hfe
270
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UMF9NTR
Manufacturer:
ROHM
Quantity:
3 432
Transistors
Power management (dual transistors)
UMF9N
2SC5585 and 2SK3019 are housed independently in a UMT package.
Power management circuit
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Silicon epitaxial planar transistor
Basic ordering unit (pieces)
Features
Structure
Equivalent circuits
Packaging specifications
Application
Tr2
(3)
(4)
Package
Marking
Code
Type
(5)
(2)
(1)
(6)
Tr1
UMF9N
UMT6
3000
TR
F9
Dimensions (Units : mm)
ROHM : UMT6
EIAJ : SC-88
0.1Min.
1.25
Each lead has same dimensions
2.1
Rev.A
UMF9N
1/5

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UMF9NTR Summary of contents

Page 1

Transistors Power management (dual transistors) UMF9N 2SC5585 and 2SK3019 are housed independently in a UMT package. Application Power management circuit Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. Structure ...

Page 2

Transistors Absolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage V EBO I C Collector current Power dissipation C Junction temperature Tj Range of storage temperature Tstg ∗1 Single ...

Page 3

Transistors Electrical characteristic curves Tr1 1000 V =2V CE Pulsed 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 Grounded emitter propagation characteristics 1000 = ...

Page 4

Transistors Tr2 200m = 100m Pulsed 50m 20m 10m 5m 2m Ta=125°C 1m 75°C 25°C 0.5m −25°C 0.2m 0. GATE-SOURCE VOLTAGE : V (V) GS Fig.9 Typical transfer characteristics 50 =2. ...

Page 5

Transistors 50 Ta =25°C f=1MH Z = iss 5 C oss C rss 2 1 0.5 0.1 0.2 0 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.18 Typical capacitance vs. ...

Page 6

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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