BCR 112L3 E6327 Infineon Technologies, BCR 112L3 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 112L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 112L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 140MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR112L3E6327XT; SP000014852

DC current gain h
V
Input on Voltage V
V
CE
CE
mA
10
10
10
10
10
10
10
10
10
10
= 5 V (common emitter configuration)
= 0.3V (common emitter configuration)
-
-1
-1
3
2
1
0
3
2
1
0
10
10
-1
0
10
0
FE
i (on)
=
10
10
= (I
(I
1
1
C
)
C
)
10
V
2
I
V
mA
C
i(on)
10
10
3
2
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
mA
mA
10
10
10
10
10
10
10
= 5V (common emitter configuration)
-1
-2
2
1
0
1
0
0
1
= (I
C
), h
0.1
1.2
FE
= 20
i(off)
0.2
1.4
=
0.3
1.6
(I
C
)
Aug-29-2003
BCR112...
V
V
V
V
i(off)
CEsat
0.5
2