PDTC123YS,126 NXP Semiconductors, PDTC123YS,126 Datasheet - Page 5

• Manufacturer Part Number: PDTC123YS,126
• Description: TRANS NPN W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTC123YS,126

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058786126; PDTC123YS AMO; PDTC123YS AMO

NXP Semiconductors
7. Characteristics
PDTC123Y_SER_4
Product data sheet
Table 8.
T
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
= 25
°
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
C unless otherwise specified.
Characteristics
Rev. 04 — 16 November 2009
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 °C
=10 mA; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 300 mV; I
= 10 V; I
C
C
C
B
E
B
B
E
= 0 A
= 5 mA
= 100 μA
= 0.5 mA
= 0 A
= 0 A
= 0 A;
= i
C
e
= 20 mA
= 0 A;
PDTC123Y series
2.5
Min
-
-
-
-
35
-
-
1.54
3.6
-
Typ
-
-
-
-
-
-
0.75
1.15
2.2
4.5
-
© NXP B.V. 2009. All rights reserved.
2.86
Max
100
1
50
700
-
150
0.3
-
5.5
2
nA
V
V
kΩ
Unit
μA
μA
μA
mV
pF
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