PDTA113ES,126 NXP Semiconductors, PDTA113ES,126 Datasheet - Page 13

• Manufacturer Part Number: PDTA113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058783126; PDTA113ES AMO; PDTA113ES AMO

NXP Semiconductors
Fig 11. Package outline SOT23 (TO-236AB)
PDTA113E_SER_5
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
Rev. 05 — 2 September 2009
0
2
1.9
e
w
0.95
B
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
M
e
1
JEITA
scale
B
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
PDTA113E series
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
© NXP B.V. 2009. All rights reserved.
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23
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