BFT92WT/R NXP Semiconductors, BFT92WT/R Datasheet - Page 10

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BFT92WT/R

Manufacturer Part Number
BFT92WT/R
Description
Trans GP BJT PNP 15V 0.025A 3-Pin SC-70 T/R
Manufacturer
NXP Semiconductors
Type
PNPr
Datasheet

Specifications of BFT92WT/R

Package
3SC-70
Supplier Package
SC-70
Pin Count
3
Minimum Dc Current Gain
20@15mA@10V
Maximum Operating Frequency
4000(Typ) MHz
Maximum Dc Collector Current
0.025 A
Maximum Collector Base Voltage
20 V
Maximum Collector Emitter Voltage
15 V
Maximum Emitter Base Voltage
2 V
NXP Semiconductors
SPICE parameters for the BFT92W crystal
May 1994
SEQUENCE No. PARAMETER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
PNP 4 GHz wideband transistor
(1)
(1)
(1)
(1)
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
437.5
33.58
1.009
23.39
99.53
87.05
1.943
4.947
1.002
3.903
5.281
35.88
1.393
5.000
1.000
5.000
1.000
10.00
0.000
1.110
3.000
746.6
600.0
0.357
17.49
1.354
155.6
1.000
45.00
937.1
396.4
0.200
0.106
8.422
0.000
VALUE
aA
V
mA
fA
V
mA
fA
A
eV
fF
mV
ps
mV
mA
deg
fF
mV
ns
F
UNIT
10
Note
1. These parameters have not been extracted, the
List of components (see Fig.18)
SEQUENCE No. PARAMETER
36
37
38
C
C
C
L1
L2
L3
L
L
handbook, halfpage
B
E
be
cb
ce
QL
f
(1)
(1)
c
default values are shown.
= scaling frequency = 1 GHz.
DESIGNATION
B
B
= 50; QL
Fig.18 Package equivalent circuit SOT323.
C be
L1
E
= 50; QL
L B
VJS
MJS
FC
B,E
(f) = QL
B'
2
100
100
0.34
0.10
0.34
0.60
0.60
C cb
E'
E
B,E
VALUE
L3
L E
(f/f
C'
c
);
750.0
0.000
0.768
Product specification
VALUE
BFT92W
fF
fF
fF
nH
nH
nH
nH
nH
C
MBC964
L2
ce
UNIT
mV
UNIT
C

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