PDTA115TK,115 NXP Semiconductors, PDTA115TK,115 Datasheet - Page 13

• Manufacturer Part Number: PDTA115TK,115
• Description: TRANS PNP W/RES 50V SOT-346
• Manufacturer: NXP Semiconductors

Specifications of PDTA115TK,115

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2112-2; 934058832115; PDTA115TK T/R

NXP Semiconductors
Fig 10. Package outline SOT323 (SC-70)
PDTA115T_SER_5
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
Rev. 05 — 2 September 2009
1.3
e
w
B
PNP resistor-equipped transistors; R1 = 100 k , R2 = open
M
0.65
B
e 1
JEITA
SC-70
scale
1
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
v
PDTA115T series
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
© NXP B.V. 2009. All rights reserved.
X
v
ISSUE DATE
04-11-04
06-03-16
M
A
SOT323
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