BCR 503 E6327 Infineon Technologies, BCR 503 E6327 Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single, Pre-Biased BCR 503 E6327
Manufacturer Part Number
BCR 503 E6327
Description
TRANSISTOR NPN DGTL 50V SOT-23
Manufacturer
Infineon Technologies
Specifications of BCR 503 E6327
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Frequency - Transition
100MHz
Power - Max
330mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
2.2 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
500 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR 503 E6327 BCR503E6327INTR BCR503E6327XT SP000010839
NPN Silicon Digital Transistor
Type
BCR503
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R
S
Built in bias resistor (R
Pb-free (RoHS compliant) package
Qualified according AEC Q101
B
1
R
1
79 °C
R
2
C
3
E
EHA07184
2
thJA
please refer to Application Note Thermal Resistance
1
2)
= 2.2 k , R
Marking
XAs
2
1)
= 2.2 k )
1=B
1
Pin Configuration
Symbol
V
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
i(fwd)
i(rev)
tot
thJS
2=E
3=C
3
-65 ... 150
Value
Value
500
330
150
50
50
20
10
215
Package
SOT23
2007-07-24
BCR503
1
Unit
V
mA
mW
°C
Unit
K/W
2
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BCR 503 E6327 Summary of contents
NPN Silicon Digital Transistor Built in bias resistor ( Pb-free (RoHS compliant) package Qualified according AEC Q101 EHA07184 Type BCR503 Maximum Ratings Parameter Collector-emitter ...
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector-base cutoff current ...
DC current gain (common emitter configuration -40 °C -25 ° °C 85 °C 125 ° ...
Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 ...
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
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