BCR 553 E6327 Infineon Technologies, BCR 553 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 553 E6327
• Description: TRANSISTOR PNP DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 553 E6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 150MHz
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR553E6327XT; SP000010854

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
10
10
400
300
250
200
150
100
50
-
0
4
3
2
1
0
10
0
/P
-6
totDC
20
10
-5
= (t
40
10
p
-4
60
)
10
80
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot
100
10
= (T
-2
120 °C
S
s
)
T
t
p
S
150
10
0
4
Permissible Pulse Load R
K/W
10
10
10
10
10
-1
3
2
1
0
10
-6
10
-5
10
-4
10
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
10
-2
2007-07-31
= (t
BCR553
s
p
t
p
)
10
0