MMUN2211LT1G ON Semiconductor, MMUN2211LT1G Datasheet - Page 17

• Manufacturer Part Number: MMUN2211LT1G
• Description: TRANS BRT NPN 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2211LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 35
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMUN2211LT1GOS; MMUN2211LT1GOS; MMUN2211LT1GOSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MMUN2211LT1G
MMUN2211LT3G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2234LT3G
MMUN2238LT1G
MMUN2241LT1G
Device
Marking
A8C
A8D
A8G
A8H
A8R
A8U
A8A
A8B
A8E
A8F
A8K
A8J
A8L
http://onsemi.com
R1(k)
100
4.7
1.0
2.2
4.7
4.7
2.2
10
10
22
47
10
10
22
22
17
R2(k)
1.0
2.2
4.7
10
10
22
47
47
47
47
47
∞
∞
∞
∞
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
10,000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
Shipping
†