MMUN2211LT1G ON Semiconductor, MMUN2211LT1G Datasheet - Page 13

• Manufacturer Part Number: MMUN2211LT1G
• Description: TRANS BRT NPN 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2211LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 35
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMUN2211LT1GOS; MMUN2211LT1GOS; MMUN2211LT1GOSTR

0.001
0.01
0.1
3.5
2.5
1.5
0.5
1
3
2
1
0
4
0
2
T
I
C
75°C
A
/I
= −25°C
B
10
V
= 10
7
R,
Figure 49. Output Capacitance
I
C
REVERSE BIAS VOLTAGE (VOLTS)
, COLLECTOR CURRENT (mA)
Figure 47. V
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2233LT1G
20
12
17
30
CE(sat)
0.1
10
1
0
vs. I
V
22
40
Figure 51. Input Voltage vs. Output Current
O
25°C
= 0.2 V
C
f = 1 MHz
I
T
25°C
E
A
6
= 0 A
= 25°C
http://onsemi.com
I
27
50
C,
COLLECTOR CURRENT (mA)
13
60
32
12
1000
0.01
100
100
0.1
10
10
1
1
1
0
18
T
75°C
Figure 50. Output Current vs. Input Voltage
A
= −25°C
75°C
T
25°C
A
75°C
I
C
= −25°C
Figure 48. DC Current Gain
24
V
, COLLECTOR CURRENT (mA)
2
in,
T
INPUT VOLTAGE (VOLTS)
A
= −25°C
30
10
4
V
6
CE
V
25°C
O
= 10 V
= 5 V
100
8