BCR 112W H6327 Infineon Technologies

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BCR 112W H6327

Manufacturer Part Number

BCR 112W H6327

Description

TRANS NPN DGTL 50V 100MA SOT323

Manufacturer

Infineon Technologies

Specifications of BCR 112W H6327

Transistor Type

NPN - Pre-Biased

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

4.7K

Resistor - Emitter Base (r2) (ohms)

4.7K

Dc Current Gain (hfe) (min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (max) @ Ib, Ic

300mV @ 500µA, 10mA

Frequency - Transition

140MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-323

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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