BCR 162 B6327 Infineon Technologies, BCR 162 B6327 Datasheet - Page 2

• Manufacturer Part Number: BCR 162 B6327
• Description: TRANSISTOR PNP DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 162 B6327

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR162B6327XT; SP000056352

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
2
Thermal Resistance
Parameter
Junction - soldering point
BCR162
BCR162F
C
C
C
C
C
C
C
For calculation of R
Pulse test: t < 300µs; D < 2%
CB
EB
CB
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 10 mA, I
= 100 µA, V
= 2 mA, V
= 10 mA, V
= 10 V, I
= 40 V, I
= 10 V, f = 1 MHz
E
CE
CE
B
E
C
B
CE
= 0
CE
= 0.5 mA
= 0
= 0
= 0
2)
= 5 V
= 0.3 V
thJA
= 5 V, f = 100 MHz
= 5 V
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2)
2
f
C
Symbol
V
V
I
I
h
V
V
V
R
R
Symbol
R
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
cb
1
1
thJS
/ R
2
min.
0.8
3.2
0.9
50
50
20
1
-
-
-
-
-
Values
Value
typ.
200
4.7
240
1
3
-
-
-
-
-
-
-
-
90
max.
1.61
100
0.3
1.5
2.5
6.2
1.1
BCR162...
2007-07-23
-
-
-
-
-
MHz
pF
Unit
V
nA
mA
-
V
k
-
Unit
K/W