MUN5213T1G ON Semiconductor, MUN5213T1G Datasheet - Page 7

• Manufacturer Part Number: MUN5213T1G
• Description: TRANS BRT NPN 100MA 50V SOT-323
• Manufacturer: ON Semiconductor

Specifications of MUN5213T1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
0.1
1
4
3
2
0
1
0
0
I
C
/I
B
= 10
10
Figure 9. Output Capacitance
V
Figure 7. V
R
I
, REVERSE BIAS VOLTAGE (VOLTS)
C
, COLLECTOR CURRENT (mA)
T
A
= --25C
TYPICAL ELECTRICAL CHARACTERISTICS - - MUN5212T1G
20
20
CE(sat)
100
0.1
10
1
0
Figure 11. Input Voltage versus Output Current
versus I
30
V
O
= 0.2 V
25C
10
C
40
f = 1 MHz
I
T
E
40
A
I
= 0 V
C
= 25C
75C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
50
50
7
0.001
1000
0.01
100
100
30
0.1
10
10
1
T
A
1
0
Figure 10. Output Current versus Input Voltage
= --25C
75C
40
2
Figure 8. DC Current Gain
25C
I
C
V
, COLLECTOR CURRENT (mA)
in
50
, INPUT VOLTAGE (VOLTS)
4
75C
10
6
25C
T
A
V
8
= --25C
CE
V
T
O
A
= 10 V
= 75C
--25C
= 5 V
25C
100
10