MUN5213T1G ON Semiconductor, MUN5213T1G Datasheet - Page 12

• Manufacturer Part Number: MUN5213T1G
• Description: TRANS BRT NPN 100MA 50V SOT-323
• Manufacturer: ON Semiconductor

Specifications of MUN5213T1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
6
5
4
3
2
1
0
0.1
0
1
0
5
I
C
--25C
/I
V
B
R
10
Figure 34. Output Capacitance
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 32. V
15
, COLLECTOR CURRENT (mA)
25C
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232T1G
20
20
75C
25
0.1
CE(sat)
10
1
0
Figure 36. Input Voltage versus Output Current
30
T
30
75C
A
versus I
= --25C
35
10
I
f = 1 MHz
I
T
C
E
40
25C
A
, COLLECTOR CURRENT (mA)
C
= 0 V
40
= 25C
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45
20
50
50
12
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 35. Output Current versus Input Voltage
75C
V
1
O
= 0.2 V
40
T
2
A
Figure 33. DC Current Gain
I
= --25C
C
V
, COLLECTOR CURRENT (mA)
in
T
, INPUT VOLTAGE (VOLTS)
25C
3
A
= --25C
50
4
5
10
75C
25C
6
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10