PBRN113ET,215 NXP Semiconductors, PBRN113ET,215 Datasheet - Page 10

• Manufacturer Part Number: PBRN113ET,215
• Description: TRANS NPN W/RES 40V SOT-23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBRN113ET,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 300mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1.15V @ 8mA, 800mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Peak Dc Collector Current: 700 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058984215; PBRN113ET T/R; PBRN113ET T/R

NXP Semiconductors
PBRN113E_SER_1
Product data sheet
Fig 11. On-state input voltage as a function of collector
V
(1) T
(2) T
(3) T
(V)
I(on)
10
10
1
1
10
V
current; typical values
amb
amb
amb
CE
1
= 0.3 V
= 40 C
= 25 C
= 100 C
1
(1)
(2)
(3)
10
10
2
I
006aab008
C
(mA)
10
Rev. 01 — 1 March 2007
3
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k
Fig 12. Off-state input voltage as a function of collector
V
(1) T
(2) T
(3) T
(V)
I(off)
10
10
1
1
10
V
current; typical values
amb
amb
amb
CE
1
= 5 V
= 40 C
= 25 C
= 100 C
PBRN113E series
1
(1)
(2)
(3)
10
I
© NXP B.V. 2007. All rights reserved.
C
(mA)
006aab009
10
2
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