PDTA123JM,315 NXP Semiconductors, PDTA123JM,315 Datasheet - Page 8
![TRANS PNP 50V 100MA SOT883](/photos/5/31/53137/sc-101_sot-883_sml.jpg)
PDTA123JM,315
Manufacturer Part Number
PDTA123JM,315
Description
TRANS PNP 50V 100MA SOT883
Manufacturer
NXP Semiconductors
Datasheet
1.PDTA123JU115.pdf
(14 pages)
Specifications of PDTA123JM,315
Package / Case
SC-101, SOT-883
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhm
Typical Resistor Ratio
0.047
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057161315
PDTA123JM T/R
PDTA123JM T/R
PDTA123JM T/R
PDTA123JM T/R
NXP Semiconductors
2004 Aug 02
Plastic surface-mounted package; 3 leads
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT346
1.3
1.0
A
0.013
A
0.1
1
1
0.50
0.35
b
p
IEC
e 1
0.26
0.10
c
D
e
3.1
2.7
D
3
b p
TO-236
JEDEC
1.7
1.3
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
SC-59A
1
JEITA
scale
B
1
8
3.0
2.5
H
E
0.6
0.2
L
p
A
2 mm
A 1
0.33
0.23
Q
H E
0.2
E
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
PDTA123J series
Q
A
c
X
Product data sheet
ISSUE DATE
v
04-11-11
06-03-16
M
A
SOT346