PDTA115TM,315 NXP Semiconductors, PDTA115TM,315 Datasheet - Page 7

• Manufacturer Part Number: PDTA115TM,315
• Description: TRANS PNP W/RES 50V SOT-883
• Manufacturer: NXP Semiconductors

Specifications of PDTA115TM,315

• Package / Case: SC-101, SOT-883
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 100 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2113-2; 934058821315; PDTA115TM T/R

NXP Semiconductors
Fig 4.
PDTA115T_SER_5
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Package outline SOT346 (SC-59/TO-236)
OUTLINE
VERSION
SOT346
1.3
1.0
A
0.013
A
0.1
1
1
0.50
0.35
b
p
IEC
e 1
0.26
0.10
c
D
e
3.1
2.7
D
3
b p
TO-236
JEDEC
1.7
1.3
E
REFERENCES
Rev. 05 — 2 September 2009
0
2
1.9
e
PNP resistor-equipped transistors; R1 = 100 k , R2 = open
w
0.95
B
M
e
SC-59A
1
JEITA
scale
B
1
3.0
2.5
H
E
0.6
0.2
L
p
A
2 mm
A 1
0.33
0.23
Q
H E
0.2
E
PDTA115T series
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
A
c
© NXP B.V. 2009. All rights reserved.
X
ISSUE DATE
v
04-11-11
06-03-16
M
A
SOT346
7 of 17