PDTC114EU,135 NXP Semiconductors, PDTC114EU,135 Datasheet - Page 2

• Manufacturer Part Number: PDTC114EU,135
• Description: TRANS NPN W/RESISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PDTC114EU,135

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934044140135

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 05
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114EM
PDTC114ES
PDTC114ET
PDTC114EU
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
−
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TC114E
*16
*09
DS
09
09
04
(1)
(1)
PDTC114E series
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114EM
PDTA114ES
PDTA114ET
PDTA114EU
−
−
10
10
PNP COMPLEMENT
TYP.
Product data sheet
50
100
−
−
MAX.
V
mA
kΩ
kΩ
UNIT