PDTA114ET,235 NXP Semiconductors, PDTA114ET,235 Datasheet - Page 5

• Manufacturer Part Number: PDTA114ET,235
• Description: TRANS PNP W/RESISTOR SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTA114ET,235

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934031060235

NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 02
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= −10 mA; I
= −100 μA; V
= −10 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0; V
5
CONDITIONS
CB
C
C
B
E
B
B
= 0
= −5 mA
CE
= −10 V; f = 1 MHz −
CE
= −0.5 mA
= 0
= 0
= 0; T
= −0.3 V
= −5 V
j
= 150 °C
−
−
−
−
30
−
−
−2.5
7
0.8
MIN.
PDTA114E series
−
−
−
−
−
−
−1.1
−1.8
10
1
−
TYP.
Product data sheet
−100
−1
−50
−400
−
−150
−0.8
−
13
1.2
3
MAX.
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT