PDTC124TT,215 NXP Semiconductors, PDTC124TT,215 Datasheet - Page 12

• Manufacturer Part Number: PDTC124TT,215
• Description: TRANS NPN 50V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTC124TT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 22 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057528215; PDTC124TT T/R; PDTC124TT T/R

NXP Semiconductors
2004 Aug 13
Plastic surface-mounted package; 3 leads
NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT416
0.95
0.60
A
max
0.1
A 1
1
0.30
0.15
b p
IEC
e 1
0.25
0.10
c
D
e
1.8
1.4
b p
3
D
JEDEC
0.9
0.7
E
2
REFERENCES
e
1
w
0
B
M
B
0.5
e
1
SC-75
JEITA
scale
0.5
12
v
1.75
1.45
M
H
E
A
0.45
0.15
1 mm
L
p
A
A 1
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
PDTC124T series
L p
A
Q
c
X
Product data sheet
ISSUE DATE
04-11-04
06-03-16
SOT416