PDTC123JE,115 NXP Semiconductors, PDTC123JE,115 Datasheet - Page 4

TRANS PNP 50V 100MA SOT416

PDTC123JE,115

Manufacturer Part Number
PDTC123JE,115
Description
TRANS PNP 50V 100MA SOT416
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC123JE,115

Package / Case
SC-75, SOT-416
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
150mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
2.2 KOhm
Typical Resistor Ratio
0.047
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934051590115
PDTC123JE T/R
PDTC123JE T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PDTC123JE,115
Manufacturer:
NXP Semiconductors
Quantity:
17 850
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
2004 Aug 13
V
V
V
V
I
I
P
T
T
T
R
O
CM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
tot
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
th j-a
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
positive
negative
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
PARAMETER
PARAMETER
open emitter
open base
open collector
T
note 1
note 1
note 1
note 1
notes 1
notes 1 and 2
notes 2 and 3
amb
≤ 25 °C
4
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
CONDITIONS
−65
−65
MIN.
VALUE
PDTC123J series
250
500
500
625
833
500
500
50
50
10
+12
−5
100
100
500
250
250
200
150
250
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
UNIT

Related parts for PDTC123JE,115