PDTC114TU,115 NXP Semiconductors, PDTC114TU,115 Datasheet - Page 5

• Manufacturer Part Number: PDTC114TU,115
• Description: TRANS PNP 50V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PDTC114TU,115

• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhm
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934044080115::PDTC114TU T/R::PDTC114TU T/R

Philips Semiconductors
7. Characteristics
PDTC114T_SER_8
Product data sheet
Fig 1. DC current gain as a function of collector
(1) T
(2) T
(3) T
h
FE
600
400
200
0
10
V
current; typical values
amb
amb
amb
CE
1
= 5 V
= 150 C
= 25 C
= 40 C
1
Table 8:
T
(1)
(2)
(3)
Symbol
I
I
I
h
V
R1
C
CBO
CEO
EBO
amb
FE
CEsat
c
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
10
Characteristics
I
C
006aaa552
(mA)
Rev. 08 — 9 February 2006
10
2
NPN resistor-equipped transistors; R1 = 10 k , R2 = open
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CB
= 150 C
= 10 mA; I
Fig 2. Collector-emitter saturation voltage as a
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 10 V; I
V
(1) T
(2) T
(3) T
CEsat
(V)
10
10
1
1
2
10
C
C
I
function of collector current; typical values
C
B
E
B
B
E
amb
amb
amb
= 0 A
/I
= 1 mA
1
B
= 0.5 mA
= 0 A
= 0 A
= 0 A;
= i
= 20
= 100 C
= 25 C
= 40 C
e
= 0 A;
PDTC114T series
1
(1)
(2)
(3)
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
200
-
7
-
10
Typ
-
-
-
-
-
-
10
-
I
C
(mA)
006aaa553
Max
100
1
50
100
-
150
13
2.5
10
2
Unit
nA
nA
mV
k
pF
A
A
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