PDTC114TT,215 NXP Semiconductors, PDTC114TT,215 Datasheet - Page 2

• Manufacturer Part Number: PDTC114TT,215
• Description: TRANS PNP 50V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTC114TT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934034900215; PDTC114TT T/R; PDTC114TT T/R

Philips Semiconductors
2. Pinning information
PDTC114T_SER_8
Product data sheet
Table 3:
Pin
SOT54
1
2
3
SOT54A
1
2
3
SOT54 variant
1
2
3
SOT23; SOT323; SOT346; SOT416
1
2
3
SOT883
1
2
3
Pinning
Description
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
GND (emitter)
output (collector)
input (base)
GND (emitter)
output (collector)
Rev. 08 — 9 February 2006
NPN resistor-equipped transistors; R1 = 10 k , R2 = open
Simplified outline
1
2
PDTC114T series
1
Transparent
top view
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
3
001aab348
006aaa144
001aab347
001aab447
2
3
3
1
2
1
2
3
1
2
3
Symbol
1
1
1
1
1
R1
R1
R1
R1
R1
006aaa218
006aaa218
006aaa218
sym012
sym012
2 of 11
2
3
2
3
2
3
3
2
3
2