PDTC114ET,215 NXP Semiconductors, PDTC114ET,215 Datasheet - Page 5

• Manufacturer Part Number: PDTC114ET,215
• Description: TRANS PNP 50V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTC114ET,215

• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 30
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031010215::PDTC114ET T/R::PDTC114ET T/R

NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 05
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= 10 mA; I
= 100 μA; V
= 10 mA; V
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0; V
5
CONDITIONS
C
C
CB
B
E
B
B
= 0
= 5 mA
CE
CE
= 0.5 mA
= 0
= 0
= 0; T
= 10 V; f = 1 MHz
= 0.3 V
= 5 V
j
= 150 °C
−
−
−
−
30
−
−
2.5
7
0.8
−
MIN.
PDTC114E series
−
−
−
−
−
−
1.1
1.8
10
1
−
TYP.
Product data sheet
100
1
50
400
−
150
0.8
−
13
1.2
2.5
MAX.
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT