PDTA124XT,215 NXP Semiconductors, PDTA124XT,215 Datasheet - Page 8

• Manufacturer Part Number: PDTA124XT,215
• Description: TRANS PNP 50V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTA124XT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 0.476
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057530215; PDTA124XT T/R; PDTA124XT T/R

NXP Semiconductors
PDTA124X_SER_8
Product data sheet
Fig 11. Package outline SOT54 variant
Fig 13. Package outline SOT323 (SC-70)
4.2
3.6
4.8
4.4
Dimensions in mm
5.2
5.0
max
2.5
14.5
12.7
2.2
2.0
Dimensions in mm
1.35
1.15
1
2
3
0.45
0.38
1
0.48
0.40
Rev. 08 — 3 September 2009
1.27
1.27
05-01-10
2.54
PNP resistor-equipped transistors; R1 = 22 k , R2 = 47 k
2.2
1.8
1.3
3
Fig 12. Package outline SOT23 (TO-236AB)
2
2.5
2.1
Dimensions in mm
0.4
0.3
0.45
0.15
1.4
1.2
1
1.1
0.8
0.25
0.10
PDTA124X series
04-11-04
3.0
2.8
1.9
3
2
0.48
0.38
© NXP B.V. 2009. All rights reserved.
0.45
0.15
1.1
0.9
0.15
0.09
04-11-04
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