PDTA123JE,115 NXP Semiconductors, PDTA123JE,115 Datasheet - Page 3

• Manufacturer Part Number: PDTA123JE,115
• Description: TRANS PNP 50V 100MA SOT416
• Manufacturer: NXP Semiconductors

Specifications of PDTA123JE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934051580115; PDTA123JE T/R; PDTA123JE T/R

NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Aug 02
PDTA123JS
PDTA123JE
PDTA123JEF
PDTA123JK
PDTA123JT
PDTA123JU
PDTA123JM
TYPE NUMBER
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
handbook, halfpage
handbook, halfpage
handbook, halfpage
2
1
Bottom view
Top view
1
1
2
3
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MAM338
1
3
1
1
R1
R1
R2
R2
R1
MDB267
MDB271
R2
3
2
3
2
2
3
PDTA123J series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION