PDTA123ET,215 NXP Semiconductors, PDTA123ET,215 Datasheet - Page 5

TRANS PNP 50V 100MA SOT23

PDTA123ET,215

Manufacturer Part Number
PDTA123ET,215
Description
TRANS PNP 50V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA123ET,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 20mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934054696215
PDTA123ET T/R
PDTA123ET T/R
NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
2004 Aug 02
R
I
I
I
h
V
V
V
R1
C
SYMBOL
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
th(j-a)
c
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
PARAMETER
PARAMETER
V
V
V
V
V
I
I
I
f = 1 MHz
C
C
C
E
CB
CE
CE
EB
CE
= i
= −10 mA; I
= −1 mA; V
= −20 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0 A; V
5
CONDITIONS
T
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
amb
C
C
CE
B
E
B
B
CB
= 0 A
= −20 mA
CE
CONDITIONS
= −0.5 mA
= 0 A
= 0 A
= 0 A; T
≤ 25 °C
= −5 V
= −10 V;
= −0.3 V
j
= 150 °C
30
−2
1.54
0.8
MIN.
PDTA123E series
VALUE
250
500
500
625
830
500
500
−1.2
−1.6
2.2
1
TYP.
Product data sheet
−100
−1
−50
−2
−150
−0.5
2.86
1.2
3
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
μA
μA
mA
mV
V
V
pF
UNIT

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