PDTA115TE,115 NXP Semiconductors, PDTA115TE,115 Datasheet - Page 2

• Manufacturer Part Number: PDTA115TE,115
• Description: TRANS PNP W/RES 50V SOT-416
• Manufacturer: NXP Semiconductors

Specifications of PDTA115TE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 100 KOhms
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2111-2; 934058801115; PDTA115TE T/R

NXP Semiconductors
2. Pinning information
PDTA115T_SER_5
Product data sheet
Table 3.
Pin
SOT54
1
2
3
SOT54A
1
2
3
SOT54 variant
1
2
3
SOT23, SOT323, SOT346, SOT416
1
2
3
SOT883
1
2
3
Pinning
Description
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
GND (emitter)
output (collector)
input (base)
GND (emitter)
output (collector)
Rev. 05 — 2 September 2009
PNP resistor-equipped transistors; R1 = 100 k , R2 = open
Simplified outline
1
2
PDTA115T series
1
Transparent
top view
3
001aab348
006aaa144
001aab347
001aab447
2
3
3
1
2
1
2
3
1
2
3
Symbol
© NXP B.V. 2009. All rights reserved.
1
1
1
1
1
R1
R1
R1
R1
R1
006aaa217
006aaa217
006aaa217
sym009
sym009
2 of 17
2
3
2
3
2
3
3
2
3
2