BCR133E6327 Infineon Technologies, BCR133E6327 Datasheet - Page 5

• Manufacturer Part Number: BCR133E6327
• Description: TRANS NPN BR 50V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR133E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 130MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR133; BCR133E6327XT; BCR133INTR; BCR133XTINTR; BCR133XTINTR; SP000010757

Total power dissipation P
BCR133
Total power dissipation P
BCR133S
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= ( T
= ( T
S
S
)
)
T
T
S
S
150
150
5
Total power dissipation P
BCR133F
Total power dissipation P
BCR133W
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= ( T
= ( T
BCR133...
2007-09-17
S
S
)
)
T
T
S
S
150
150