DTA144GUAT106 Rohm Semiconductor, DTA144GUAT106 Datasheet - Page 2

• Manufacturer Part Number: DTA144GUAT106
• Description: TRANS PNP 50V 100MA SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of DTA144GUAT106

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA144GUAT106; DTA144GUAT106TR

Transistors
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗
Electrical characteristics (Ta=25°C)
Electrical characteristics curves
Transition frequency of the device.
Parameter
500
200
100
50
20
10
1k
100µ 200µ
5
2
1
V
Fig.1 DC current gain
CE
=5V
COLLECTOR CURRENT : I
500µ 1m
vs. Collector current
Ta=25°C
2m
5m 10m 20m
Symbol
V
BV
BV
BV
Ta= −40°C
C
Ta=100°C
I
I
CE(sat)
h
(A)
CBO
EBO
R
f
FE
CBO
CEO
EBO
T
50m 100m
Min.
32.9
−50
−50
−65
−5
68
−
−
−
Typ.
250
47
Fig.2 Collector-Emitter saturation voltage
−
−
−
−
−
−
−
500m
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
1
vs. Collector current
I
C
/I
−130
Max.
−0.5
−0.3
61.1
B
=20/1
−
−
−
−
−
DTA144GUA / DTA144GKA
COLLECTOR CURRENT : I
500µ 1m
MHz
Unit
µA
µA
kΩ
Ta=25°C
V
V
V
V
−
2m
5m 10m 20m
I
I
I
V
V
I
I
V
C
C
E
C
C
= −160µA
CB
EB
CE
= −50µA
= −1mA
= −10mA , I
= −5mA , V
= −4V
= −50V
= −10V , I
Ta=100°C
Ta= −40°C
C
(A)
50m 100m
Conditions
CE
B
E
Rev.A
= −0.5mA
=5mA , f=100MHz
= −5V
−
2/2
∗