DTA144GUAT106 Rohm Semiconductor, DTA144GUAT106 Datasheet

TRANS PNP 50V 100MA SOT-323

DTA144GUAT106

Manufacturer Part Number
DTA144GUAT106
Description
TRANS PNP 50V 100MA SOT-323
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of DTA144GUAT106

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTA144GUAT106
DTA144GUAT106TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DTA144GUAT106
Quantity:
21 000
Transistors
Digital transistors (built-in resistor)
DTA144GUA / DTA144GKA
1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and
2) Only the on / off conditions need to be set for operation, making device design easy.
3) Higher mounting densities can be achieved.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Features
Circuit schematic
Absolute maximum ratings (Ta=25°C)
Package, marking, and packaging specifications
Package
Marking
Packaging code
Basic ordering unit (pieces)
parasitic effects are almost completely eliminated.
E : Emitter
C : Collector
B : Base
B
Parameter
Part No.
R
C
E
DTA144GUA
Symbol
V
V
V
Tstg
UMT3
Pc
CBO
CEO
Tj
T106
3000
EBO
I
K16
C
−55 to +150
DTA144GKA
Limits
−100
−50
−50
200
150
SMT3
−5
T146
3000
K16
DTA144GUA / DTA144GKA
Unit
mW
mA
V
V
V
C
C
Rev.A
1/2

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DTA144GUAT106 Summary of contents

Page 1

Transistors Digital transistors (built-in resistor) DTA144GUA / DTA144GKA Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Transition frequency of the device. Electrical characteristics curves ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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